摘要
This study investigates the effect of the magnetic field on the transient density of excess minority charge carriers in the base of a series-connected vertical junction silicon solar cell. The solar cell is presented in open circuit transient operation. The magnetic field through the Laplace force which deflects the photogenerated carriers from their initial trajectory towards the lateral surfaces reducing their mobility, diffusion and conduction, will certainly influence the decay time of the transient regime. The transient density of excess minority carriers in the base is a sum of infinite terms whose decay time of the different harmonics is studied.
This study investigates the effect of the magnetic field on the transient density of excess minority charge carriers in the base of a series-connected vertical junction silicon solar cell. The solar cell is presented in open circuit transient operation. The magnetic field through the Laplace force which deflects the photogenerated carriers from their initial trajectory towards the lateral surfaces reducing their mobility, diffusion and conduction, will certainly influence the decay time of the transient regime. The transient density of excess minority carriers in the base is a sum of infinite terms whose decay time of the different harmonics is studied.
