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10GB/s光接收机前端限幅放大器设计 被引量：2

Design of the Limiting Amplifier in 10Gb/s Optical Receiver's Front End
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摘要 作为光接收机前端的关键部分,限幅放大器要求具有高增益、足够带宽以及较宽的输入动态范围。本文在0.18滋m1P6MCMOS工艺上设计了一种用于10Gb/s传输速率的限幅放大器。该限幅放大器的增益S21可达31dB,-3dB带宽为11.3GHz,在10GHz范围内S11、S22均小于-10dB。对于从10mVpp至1.5Vpp的较宽的输入动态范围,均可保持稳定的输出眼图。利用CMOS工艺中、多层金属互连线的顶层金属设计的共面带状线,可将放大器的工作频带扩展至10Ghz以上。 As the key component of optical receiver, design of a high-speed limiting amplifier with high gain, broadband, and a wide dynamic input range is required.A limiting amplifier implemented in 0.18μm 1P6M CMOS technology for low-cost 10Gb/s application is described. The total gain is 31dB, -3dB bandwidth of S21 reaches 11.3GHz. Parameters S11 and S22 are better than -10dB in the 10GHz frequency range.A good output eye diagram can be available in a wide dynamic input range from 10mVpp to 1.5Vpp. Coplanar stripline in the top metal layers extends the bandwidth of the amplifier beyond 10GHz.
作者 许静 李征帆
机构地区 上海交通大学电子工程系
出处 《微电子学与计算机》 CSCD 北大核心 2004年第5期150-153,共4页 Microelectronics & Computer
关键词 光接收机 限幅放大器 共面带状线 Optical receiver, Limiting amplifier, Coplanar stripline
分类号 TN4 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献6

  • 1M. Neuhauser, H. M. Rein, and H. Wern, "Low-noise,high-gain Si-bipolar preamplifiers for 10 Gb/s optical links-Design and realiation,"IEEE J. Solid-State Circuits,vol.31, no. 1, pp. 24-29, 1996.
  • 2Zhi-Gong Wang, Berroth, M., Hurm, V., "17 GHz-bandwidth 17 dB-gain 0.3 um-HEMT low-power limiting amplifier ," In Dig. Tech. Symp. VLSI Circuits, 1995, pp.97-98.
  • 3Yuriy M. Greshishchev, Peter Schvan, "A 60-dB gain, 55-dB dynamic range, 10-Gb/s broadband SiGe HBT limiting amplifier," IEEE Journal of Solid-State Circuits, Vol.34,Dec.1999, pp.1914-1920.
  • 4Rehzad Razavi著,陈贵灿等译,Design of Analog CMOS and Integrated Circuits,第一版.西安交通大学出版社,2002,212-232.
  • 5李征帆,毛军发.微波与高速电路理论,第一版.上海交通大学出版社,2001,178-219.
  • 6Kavita Goverdhanam,Rainee N.Simons and Linda P.B.Katehi,"Coplanar Stripline Components for High-Frequency Applications",IEEE Transactions on microwave theory andtechniques,vol.45,October 1997,1725-1729.

同被引文献12

  • 1金杰,冯军,盛志伟,王志功.0.18μm CMOS 10Gb/s光接收机限幅放大器[J].电子学报,2004,32(8):1393-1395. 被引量：10
  • 2Tanabe A, Umetani M, Fujiwara I, et al. 0.18psn CMOS 10- Gb/s multiplexer/ demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation [J]. IEEE J Solid-State Circuits, 2001, 36(6):988- 996.
  • 3Mounir Meghelli, Alexander V Rylyakov, Lei Shah. 50- Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication systems [J]. IEEE J Solid- State Circuits, 2002, 37(12) :1790 - 1794.
  • 4Ding Jingfeng, Wang Zhigong, Zhu En, et al. 12Gb/s 0. 25pro CMOS lowpower 1- 4 demultiplexer [ J ]. Chinese Journal of Semiconductors, 2006, 27(1): 19-23.
  • 5Wang Gui, Wang Zhigong, Wang Huan, et al. 20Gb/s 1: 2 dernultiplexer in 0.18μm CMOS[J]. Chinese Journal of Semiconductors, 2005, 26(10) : 1881 - 1885.
  • 6WANG Zhi-Gong,BERROTH M,HURM V.17 GHz-band width 17 db-gain 0.3μm-HEMT low-power limiting amplifer[C]// Dig Tech Symp VLSI Circuits,1995:97 -98.
  • 7ASHBURN P.Materials and technology issues for SiGe hetero-junction bipolar tansistors[J].Materials Science in Semiconductor Processing,2001,4:521 -527.
  • 8ANSLEY W E,CRESSLER J D,RICHEY D M.Base profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBTs[J].IEEE Trans on Microw Theory Tech,1994,46:653-660.
  • 9GRESHISHCHEV Y M,SCHVAN P.A 60-dB gain,55-dB dynamic range,10 -Gb/s broadband SiGe HBT limiting amplifier[J].IEEE Journal of Solid-State Circuits,1999,34:1914-1920.
  • 10RAZAVI B.Design of high-speed circuits for optical communication system[J].IEEE Journal of Solid-State Circuits,2001,37 (9):1135-1145.

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微电子学与计算机
2004年 第5期

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