摘要
利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态 .多普勒增宽谱的结果表明 ,不同杂质元素掺杂的金刚石薄膜 ,其中使正电子湮没的缺陷种类是相同的 ;正电子与不同杂质元素硼、硫之间的相互作用不明显 ;少量硼可使金刚石膜中的空位浓度减少 .EPR结果表明 。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR). The results show that the defects annihilating the positrons is almost the same in various doped films, and the interactions between the dopants and the positrons are not distinct. In addition, a small amount of boron atoms can improve the quality of diamond films. The EPR signals of the diamond films arise from carbon dangling bonds.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第6期2014-2018,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :5 0 0 82 0 0 5 )资助的课题~~
