摘要
介绍溶胶-凝胶(Sol-Gel)法制备Bi4Ti3O12薄膜的工艺过程;对前驱体溶液进行了综合热分析,并对薄膜的性质进行了研究;成功地在p-Si衬底上制备出随机取向的Bi4Ti3O12铁电薄膜。在650°C下退火30min得到的Bi4Ti3O12薄膜的剩余极化强度Pr=12μC/cm2,矫顽场强Ec=130kV/cm。
Randomly oriented ferroelectric Bi_4Ti_3O_(12) thin films have been prepared on p-Si substrates by the Sol-Gel method. A homogeneous and stable precursor solution is obtained using Bi(NO_3)_3·5H_2O and Ti(OC_4H_9)_4 as starting materials. The experimental results show that the thin films annealing at 650 °C for 30 min are well crystallized and dense, its remanent polarization is 12 μC/cm^2 and coercive field is 130 kV/cm.
出处
《压电与声光》
CAS
CSCD
北大核心
2004年第3期228-230,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(60171012)
中科院核分析技术开放实验室基金资助项目(K-96)
