摘要
采用激光烧蚀法制备了磷掺杂硅纳米线和硼掺杂硅纳米链,并运用透射电子显微镜(TEM)、近边X射线吸收精细结构光谱(NEXAFS)、X射线光电子能谱(XPS)及场发射(FE)测量等对其进行了研究。结果表明:硅纳米线包覆在二氧化硅层中及其核心由磷掺杂的晶体硅构成,磷不仅存在于硅纳米线的核心内,也存在于二氧化硅与硅核心的相界面上;硼掺杂硅纳米链的外部直径约为15nm,由直径11nm的晶核和2nm的无定形氧化物外层构成的晶格所组成,其粒间距为4nm,硅纳米粒子链的阀值场强为6V/μm,优于未掺杂的硅纳米线的阀值场强(9V/μm)。X射线光吸收谱可以补充提供常规电流 电压测量得不到的信息,并提示掺杂分布的细节。
Phosphorus-doped silicon nanowire(P-SiNW) and boron-doped silicon nanoparticle chain(B-SiNC) synthesized by using laser ablation method were investigated by transmission electron microscopy(TEM), high resolution transmission electron microscopy(HRTEM), near edge X-ray absorption fine structure spectroscopy(NEXAFS), X-ray photoelectron spectroscopy(XPS) and field emission measurement etc. The results show that the nanowires are encapsulated within a silica layer and that the cores of the nanowires are crystalline silicon doped with phosphorus. Phosphorus is found to be inside the core of the Si wire and at the interface of silica outerlayer and silicon core. TEM and HRTEM show that the outer diameters of the nanoparticles are around 15 nm and the nanoparticles have perfect lattices with 11 nm crystalline core and 2 nm amorphous silica outerlayer while the distance of the interparticles is 4 nm. Field-emission measurement show that the turn-on field of B-SiNC is 6 V/μm, which is much lower than that of undoped Si nanowires(9 V/μm). And X-ray absorbtion spectroscopy can also provide complementary information to the common current-voltage measurement and detail information of the doped distribution, simultaneously.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2004年第F01期398-403,共6页
The Chinese Journal of Nonferrous Metals
基金
香港研究基金委员会及加拿大国家科学与工程研究委员会(NSERC)资助项目(9040637)
美国国家科学基金(NSF)资助项目(DMR 0084402)
关键词
硅纳米线
硅纳米链
掺杂
光电特性
激光烧蚀
silicon nanowire
silicon nanoparticle chain
doping
optoelectronic characteristic
