摘要
超高真空条件下,采用电子束蒸发工艺在Si(111)衬底上交替蒸镀200A的Co和Si薄膜形成多层膜结构,在恒温炉中作稳态热退火,然后用XRD、RBS及AES等技术作分析,研究了Co-Si多层膜固相反应的相序,用四探针测量了反应生成的钴硅化物的电阻率。结果表明,随着退火温度的升高,淀积在Si(111)上的Co膜逐步转化为Co_2Si、CoSi和CoSi_2,最后完全转化为CoSi_2。在比单层膜低得多的温度下退火获得了电阻率较低、表面形态良好、晶粒很大的CoSi_2薄膜材料。
Alternating layers of Si (20 nm thick) and Co (20 nm thick) up to 10 layers were depositedby electron evaporation under ultrahigh vacuum conditions on Si (111) substrate. Wehave investigated the phase sequence of Co-Si multilayer films by XRD, RBS and AES, anddetermined the sheet resistance of the formed silicides by four point probe technique. With increasingannealing temperature, it was found that the Co-Si multilayer films were transformedinto Co_2Si,CoSi and CoSi_2, finally into CoSi-2 entirely. Using this technology, wemade a CoSi_2 film with very large grain size, low resistivity and good surface morphology.
基金
国家自然科学基金
关键词
Co-Si
硅化物
热退火
固相界面
Annealing
Cobalt compounds
Interfaces (materials)
Semiconducting silicon
