摘要
RBS,AES,XPS分析结果证实:在有微量氧存在的氮气中,Ti/SiO_2(薄)/Si体系不同温度下退火过程均无TiN生成;随退火温度升高,该体系形成的TiSi_2层不断增厚,Ti氧化物层不断变薄,并伴有SiO_2在表面层重新出现。通过△G的计算,热力学证明反应2TiO+5Si=2TiSi_2+SiO_2能够发生,并以此解释了退火中各层的变化规律。
Annealing processes of the Ti/SiO_2/Si system at different temperatures in nitrogen witha trace of oxygen were studied by using RBS, AES and XPS. There is no TiN formed in thesystem. When the temperature rises, the Layer of Ti silicide will be thickened with the layerof Ti oxide thined, whereas silicon oxide will reappear at the top of the Ti oxide layer. Calculatingthe △G of reactions at different temperatures we believe that the reaction 2TiO+5Si=2TiSi_2+SiO_2 in the Ti oxide layer is thermodynamically favored in the annealing processes athigher temperatures. The explanation of the change in Ti silicide layer and Ti oxide layer isgiven as well.
