摘要
通过测量材料的塞贝克系数和电阻率随温度的变化,首先可以判断出测量是否处于载流子浓度的饱和温区,进而能够导出在该饱和温区上载流子的迁移率随温度的变化关系、对高温热处理前后迁移率-温度关系的实验研究表明:SiGe:GaP中电子-声子散射经高温热处理后得到相对增强。
The effect of high temperature heat treatment on the scattering mechanisms of SiGe:GaPalloys is reported. The scattering mechanisms were investigated through the temperature dependenceof the carder mobility obtained by measuring electrieal resistivity and Seebeck coefficientas a function of temperature. The results show that the relative strength of electronphononscattering in the alloys has been enhanced after high temperature heat treatment.
