摘要
本文利用光电流谱方法研究了10—300K温度范围内In_(0.2)Ga_(0.8)As/GaAs应变层短周期超晶格的Wannier-Stark效应,在室温及低温下均观察到明显的吸收边场致“蓝移”现象,并对Stark-ladder激子跃迁的能量位置及振子强度随电场的变化给予详细讨论。实验结果表明,利用In_(0.2)Ga_(0.8)As/GaAs应变层超晶格的Wannier-Stark效应可以制作0.98μm波长范围的电光调制器和自电光双稳器件。
We have studied bias-dependence of photocurrent response near GaAs/Ga_(0.7)Al_(0.3)As superlatticeabsorption edge in superlattice p-i-n diodes at room temperature. The-1h and -2h excitontransitions induced by Wannier localization produce two regions of negative differential photoconductivity.Photocurrent (absorption) electro-optical bistability and tristability have beenrealized in SEED devices composed of a superlattice p-i-n diode, and especially, obvious bistabilitytransitions have been observed in unbiased SEED devices.
关键词
化合物半导体
应变层
超晶格
效应
Semiconducting gallium compounds
Semiconducting indium compounds
Semiconductor superlattices
