摘要
用稳态光致发光研究了偏压下的GaAs/Ga_(0.65)Al_(0.35)As/GaAs非对称耦合双阱(ADQW)结构中电子的隧穿现象。清楚地观察到电子从窄阱到宽阱的共振隧穿和LO声子辅助隧穿效应,而且证明来自于GaAlAs势垒层中的类AlAs模式声子在LO声子辅助隧穿过程中占据主导地位。
Tunneling phenomena of electrons in a biased GaAs/Ga_(0.35)Al_(0.65)As/GaAs asymmetric
coupled quantum well(ADQW) structure have been investigated by using steady-state Photoluminescence.
The effects of resonant tunneling and LO-phonon-assisted tunneling for electrons
from the narrow well to the wide well have obviously been observed. It has also been
demonstrated that AlAs-like LO phonons from the GaAlAs tunnel barriers play a deminant
role in the LO-phonon-assisted process.
