摘要
主要评述了Schottky结和PN结多孔硅基发光二极管的结构和性能及其研究进展。讨论了器件界面态对其性能的影响。最后分析了目前器件研究中存在的亟需解决的问题以及解决方法。
The structure and properties of the porous silicon based injection lightemitting diodes with Schottky and PN junctions and their developments are reviewed. The effects of interface state on the LEDs are discussed. Finally, someproblems and their solution currently available in the study of PS based LEDs areanalysed.
出处
《半导体情报》
1993年第6期34-37,57,共5页
Semiconductor Information
