摘要
本文叙述了600℃低温液相外延和两相溶液法生长InGaAsP/InP超薄层及其特性研究。四元外延层的厚度、光荧光峰值半宽、过渡区陡度分别为～63nm,22.8meV,～11nm。四元层与衬底间失配度为+0.3‰。
The growth of InGaAsP/InP ultra-thin epi-layer by low temperature (600℃)liquid phase epitaxy and two phase solution techniques are described as well as the characterization of the fabricated quaternary layers.The thickness,the PL half width and the transient region are about 63nm,22.8meV and about llnm, respectively.The lattice mismatch between the quaternary layer and the substrate is +0.3‰.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第3期296-300,共5页
Semiconductor Optoelectronics
基金
上海市自然科学基金
关键词
液相外延
两相溶液法
半导体薄膜
Ultra-thin Layer
LPE
Two Phase Solution Technique
