摘要
介绍了高铝含量和 Mg 掺杂的 Ga_(1-x)Al_xAs/GaAs 太阳电池的多片液相外延(LPE)生长技术,分析了 Ga_(1-x)Al_xAs 生长熔体中 GaAs 的熔解度,载流子浓度与 Mg 含量及 x 值与铝组分的关系。用多片石墨舟液相外延生长的、具有高铝含量(x=0.9)的 Ga_(1-x)Al_xAs/GaAs 太阳电池,最高转换效率达17.7%。
This paper introduces the multi-wafer LPE growth for techology of Al_xGa_(1-x)As/GaAs solar cells with high aluninum content and Mg dopant.The de- petdence of Al composition on meltability of GaAs,carrier concentration,Mg con- tent and the x value of Al_xGa_(1-x)As is analysed.AlGaAs/GaAs solar cells with high aluminium content (x=0.9)growth by the multi-wafer graphite boat LPE have ex- hibited maximum conversion efficency of 17.7%.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第2期167-171,共5页
Semiconductor Optoelectronics
