摘要
本文讨论用GaAs的有效反常散射因数来测定Ga在其K吸收限附近的f的方法,并用两组Bijvoet对的积分反射强度较好地求得了f。
The method of using effective anomalous scattering factor method in determination of anomalous scattering factor f″_(Ga) for Ga near the K absorption edge in GaAs is discussed in the pa- per. Then f″_(Ga) is well determined by using different two sets of intensities between Bijvoet pair re- flexions.
出处
《安徽大学学报（自然科学版）》
CAS
1993年第3期26-31,共6页
Journal of Anhui University(Natural Science Edition)
关键词
反常散射
砷化镓
吸收限
镓
anomalous scattering
effective anomalous scattering
absorption edge
Bijvoet pair
x-ray absorption near edge structure (XANES)
