摘要
SIMNI样品在不同温度下作不同时间的N_2,O_2,H_2+ O_2的退火、氧化或外延,以考察SIMNI/SOI结构的工艺稳定性.不同注入剂量的 SIMNI样品在 1000-1200℃的 H_2气氛中烘烤,以考祭高温H_2对该结构的影响.实验结果表明,在高温下,N_2、O_2、H_2+O_2等工艺气氛中,SIMNI结构的电学性质、埋层厚度等都稳定可靠;高温H_2对SIMNI结构的表层Si和埋层Si_3N_4 都有损伤作用.实验指出,提高注N^+剂量有助于提高SIMNI/SOI结构在高温H_2中的稳定性.该结果对 SIMNI/SOI器件工艺和外延工艺有一定的指导意义.
SIMNI/SOI samples were undergone annealing,Oxidization and epitaxy in different ti-mes and at different temperatures to inverstigate the process stability of SIMNI/SOI structure.SIMNI/SOI samples with different implantation doses were heated at 1000-1200℃ in H_2 to in-verstigate the effect of hydrogen on this structure.The results suggest that the properties ofthe SIMNI structure,such as electrical propery,thickness of buried nitride silicon layer, etc,are more stable during high temperature processing (in N_2,O_2,H_2+O_2). But, the top crystalsilicon layer and buried nitride layer of SIMNI structure would be damaged by hydrogen athigh temperatures. Raising the implantation dose of nitrogen is helpful to increase the stabilityof SIMNI/SOI structure at high temperatures in H_2 at mosphere.
关键词
SIMNI/SOI
结构
高温
工艺
可靠性
Process Engineering
Stability
Semiconductor Materials
Ion Implantation
