摘要
本文根据作者已有的实验数据和在前人工作的基础上,分析了导致微通道板经电子轰击后增益大幅度下降的原因.并据此对照国外同类产品剖析了目前国内微通道板生产中影响增益的几个因素,提出相应的改进意见.
From the experimental results performed by authors and other workers, the causes of the decay of MCP gain after bombarding by electrons have been analysed. Several factors which effect the decay of MCP gain have been discussed, and the corresponding suggestions have been presented.
出处
《光电子技术》
CAS
1992年第1期59-64,共6页
Optoelectronic Technology
关键词
微通道板
增益衰减
电子储增器
MCp, yield of secondary electron, MCP gain, decay of MCP
