摘要
本文报道了用改进了的静态升华法生长大尺寸优质HgI_2单晶,并对晶体的完整性进行了观测,测量了晶体的透过率和光电特性.实验结果表明,采用这种方法生长HgI_2单晶,设备简单,便于控制成核和生长条件,有利于获得低位错密度大单晶体,是一种行之有效的方法.
Hgl_2 single crystals with large size and high quality have been grown by a modifiedstatic sublimation method. The perfection, transmissivity and photoelectric property of thecrystal have also been determined. The experiment results show that this method is effectivefor growing large single crystal of Hgl_2 with low dislocation density and possesses the ad-vantages of simple equipment and convenience in controling the nucleation and growthconditions.
