摘要
本文利用高分辨电子能量损失谱(HREELS),俄歇电子能谱(AES)和低能电子衍射(LEED)详细研究了O_2在FeSi(100)表面上的初始吸附阶段(0-10L),以及温度(RL-550℃)对吸附的影响.此外,通过对实验结果的分析,给出一种室温下O原子在FeSi(100)表面上吸附的模型.
Initial adsorption stages of oxygen on the FeSi(100) surface has been studied as a fun-ction of exposure (0-10L) and annealing temperature (RT-550℃) using HREELS, AES andLEED. O_2 was found to adsorb dissociatviely on the FeSi(100) surface at room temperature.These dissociated oxygen atoms absorbed randomly at either the bridge or top position of theFeSi(100) surface, and no preferential position for the adsorption was observed. An adsor-ption model for the initial stages of adsorption of O_2 on the FeSi(100) surface has been pu-forward to account for the observed experimental results.
基金
国家自然科学基金
关键词
氧分子
FESI
吸附
俄歇电子能谱
Semiconductor Materials
Oxidation
Surface Phenomena
Oxidation
