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薄膜外延生长及其岛核形成的计算机模拟 被引量:7

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摘要 以Cu膜为例, 用Monte Carlo算法模拟了薄膜生长的随机过程. 找到了生长过程中的三个优化温度, 并研究了它们的渐近一致性, 同时对各种温度区间内表面粗糙度、相对密度随入射率的变化规律进行深入的探讨. 模拟中考虑了一些新的效应, 如原子迁移过程中势能的变化, 以及原子扩散引起的连带效应, 从而使模拟更加合理. 模型中采用了冻结周围原子近似和周期性边界条件处理.
出处 《中国科学(G辑)》 CSCD 2004年第2期131-140,共10页
基金 国家自然科学基金(批准号: 10175030) 兰州大学博士后基金资助项目
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参考文献51

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二级参考文献23

  • 1Kralj M, Pervan E Milun M. Growth, structure and properties of ultra-thin copper films on a V(110) surface. Surf Sci, 1999,423:24-31.
  • 2Dehm G, Scheu C, Ruhle M, et al. Growth and structure of internal Cu/Al2O3 and Cu/Al2O3 interfaces. Acta Mater, 1998, 46:759-772.
  • 3Abe K, Harada Y, Onoda H. Study of crystal orientation in Cu film on TiN layered structures. J Vac Sci Tech B, 1999, 17:1464-1469.
  • 4Nagamachi S, Yamakage Y, Ueda M, et al. Focused ion-beam direct deposition of metal thin film. Rev Sci instrum, 1996, 67:2351-2359.
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