期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

SCDI Flash Memory Device Ⅰ: Simulation and Analysis

SCDI结构快闪存储器件Ⅰ:模拟与分析(英文)
在线阅读 下载PDF
导出
摘要 Step channel direct injection(SCDI)flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel .Therefore high speed for programming,high efficiency for injection,and lower working voltage are obtained.Simulation and analysis for the proposed SCDI structure device are done and an optimization scheme to improve the utmost performance of SCDI device is given... 研制成一种台阶沟道直接注入 (SCDI)器件 ,通过在沟道的中间制作一个浅的台阶来改变热载流子的注入方式 ,从而获得了高的编程速度和注入效率 ,降低了工作电压 .并对 SCDI器件结构和常规器件结构进行了模拟分析 ,提出了改进
作者 欧文 钱鹤
机构地区 中国科学院微电子研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第4期361-365,共5页 半导体学报（英文版）
基金 国家重点基础研究专项经费 (批准号 :G2 0 0 0 0 3 65 ) 国家自然科学基金 (批准号 :60 2 760 2 3 )资助项目~~
关键词 SCDI flash memory programming speed OPTIMIZATION low voltage SCDI 快闪存储器 编程速度 优化 低电压
分类号 TP333 [自动化与计算机技术—计算机系统结构]
  • 相关文献

参考文献15

  • 1Ou Wen,Li Ming,Qian He.A novel non-planar cell structure for flash memory.Chinese Journal of Semiconductors,2002,23(11):1158
  • 2Pan Liyang,Zhu Jun,Liu Zhihong,et al.A novel flash memory using band-to-band tunneling induced hot electron injection to program.Chinese Journal of Semiconductors,2002,23(7):690
  • 3Pan Liyang,Zhu Jun,Liu Kai,et al.Novel p-channel selected n-channel divided bit-line NOR flash memory using source induced band-to-band hot-electron injection programming.Chinese Journal of Semiconductors,2002,23(10):1031
  • 4Vanhoudt J,Heremans P,Deferm L,et al.Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications.IEEE Trans Electron Devices,1992,39(5):1150
  • 5Pein H B, Plummer J D. Performance of the 3-D sidewallflash EPROM cell.IEDM,1993:11
  • 6Ohnakado T,Mitsunaga K,Nunoshita M,et al.Novel electron injection method using band-to-band tunneling induced hot electron(BBHE) for flash memory with a P-channel cell.IEDM,1995:279
  • 7Yamauchi Y,Yoshimi M,Sato S,et al.A new cell structure for sub-quarter micron high density flash memory.IEDM,1995:267
  • 8Hu C Y, Kencke D L, Banerjee S K. Substrate-current-in-duced hot electron(SCIHE) injection:a new convergence scheme for flash memory.IEDM,1995:283
  • 9Connor K J O,et al.A novel CMOS compatible stacked floating gate device using TiN as a control gate.Sympo VLSI Tech Dig Tech Papers,1997:61
  • 10Chen Weiming,et al.A novel flash memory device with split gate source side injection and ONO charge storage stack(SPIN).Symp VLSI Tech Dig Tech Papers,1997:63
Journal of Semiconductors
2004年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部