摘要
建立了 6 H- Si C CMOS反相器的电路结构和物理模型 ,并利用 MEDICI软件对其特性进行了模拟 .研究了Si C CMOS反相器的温度特性 ,结果表明 ,室温下沟道长度为 1.5 μm的 6 H- Si C CMOS反相器的阈值电压、高电平噪声容限和低电平噪声容限分别为 1.6 5 7,3.15 6和 1.4 70 V,且随着温度的升高而减小 .
The circuit structure and physical models of 6H-SiC CMOS inverter are built,and the properties are simulated with the use of MEDICI software.The properties of CMOS inverter varying with the operating temperature is summarized,which indicates that the switching threshold,high noise margin and low noise margin of the 1.5 micron channel 6H-SiC CMOS inverter are 1.657,3.156,and 1.470V at room temperature respectively and decrease with the temperature increasing.
基金
国家自然科学基金资助项目 (批准号 :697760 2 3 )~~
