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铋层状结构无铅压电材料的改性 被引量:4

Improvement of Bismuth Layer Structure Lead-free Piezoelectric Material
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摘要 本文介绍了铋层状结构无铅压电材料的研究现状及存在的问题。铋层状结构无铅压电材料居里温度较高,可以用于高温压电方面的应用,但其压电性能较差。本文重点介绍了提高铋层状结构无铅压电材料压电性能的措施——晶粒定向生长和掺杂。 This paper introduces the present situation and existing problems of bismuth layer structure lead-free piezoelectric material,the curie temperatures of which are very high,so they can be used in high temperature piezoelectric application.But their piezoelectric property is poor.Several processings,grain orientation growth (TGG) and doping,which can improve performance of the bismuth layer structure lead-free piezoelectric material,are introduced.
出处 《佛山陶瓷》 2004年第4期32-34,共3页 Foshan Ceramics
关键词 铋层状结构 压电材料 晶粒定向生长 改性 温度 压电性能 压电陶瓷 bismuth layer structure piezoelectric material,lead-free,grain orientation growth
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参考文献5

  • 1[2]Aurivillius, B.,Mixed Bismuth Oxides with Layer Lattices I Arkiv Kemi, 1949, 1,463
  • 2[3]Aurivillius, B.,Mixed Bismuth Oxides with Layer Lattices ⅡArkiv Kemi, 1951, 2, 519
  • 3[4]Yun, Wu. Study of Vanadium Doped Strontium Bismuth Niobate Tantalate Ferroelectric Ceramics and Thin Film, University of Washington(doctor dissertation),2001
  • 4[7]Tadashi Takenaka, Grain Orientation Effects on Electrical Properties of Bismuth Layer-Structured Ferroelectric Ceramics, Journal of the Ceramic Society of Japan, i10(4),215~224,2002
  • 5[8]0gawa H, Kimura M,Ando A, et al,Temperature dependence of piezoelectric properties of grain-oriented CaBi4Ti4O15 ceramics,Jpn. J. Appl. Phys. 140 (9B),5715~5718,2001

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