摘要
用脉冲高能红外激光(波长10.6μm),在N型和P型单晶硅中分别掺入铝和锑,制备了最大面积可达φ20mm的p-n结.激光掺杂存在一个阈值能量密度.掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关.并对p-n结的伏安特性,扩散层薄层电阻和光生电压进行了测试.
The preparation of p-n junctions of large area (maximum area 20 mm) Toy irradiat ion doping Al and Sb in N and P type crystals Si respectively using h Lgh-energy pulse infra-red laser (wavelength = 10.6 um) is carried out. It is found that there is a threshold energy density in laser doping, and distributions of dopant density an d depth have relation to preheat temperature and plating layer thickness of the impurities. Volt-ampere characteristics, thin-layer resistance and photvoltage of the p-n junction are measured.
出处
《应用科学学报》
CAS
CSCD
1992年第3期241-246,共6页
Journal of Applied Sciences
关键词
激光掺杂
硅
铝
锑
P-N结
laser doping, threshold energy, preheat.
