摘要
作者用热壁外延方法在(100)GaAs衬底上生长Zn_(1-x)Mn_xSe拉半磁半导体薄膜,并用X射线衍射(XRD)、喇曼散射、俄歇电子能谱(AES)等技术对薄膜性能作了研究.实验结果表明已成功地生长出(100)Zn_(1-x)Mn_xSe单晶薄膜,其中x最大达到0.17.
Zn1-xMNxSe films are grown on the (100) GaAs substrate by hot wall epitaxy. The films are studied by X-ray diffraction, Raman and AES. The results show thai Single crystal (100)Zn1-xMnxSe films have been gotten and that x can be up to 0.17.
出处
《应用科学学报》
CAS
CSCD
1992年第2期161-166,共6页
Journal of Applied Sciences
关键词
薄膜
热壁外延
半磁半导体
ZnMnSe
hot wall epitaxy, Zni_(1-x)Mn_xSe films, diluted magnetic semiconductors.
