Parameter extraction for a Ti/4H-SiC Schottky diode
被引量：4
同被引文献19
1 SHERIDAN D C,CHUNG G Y,CLARK S,et al.The effects of high-dose gamma irradiation on high-voltage 4H-SiC schottky diodes and the SiC-SiO2interface[J].IEEE Trans Nucl Sci,2001,48 (6):2229-2232.
2 KIM J H,REN F,CHUNG G Y,et al.Comparison of stability of WSi/SiC and Ni/SiC Sehottky rectifiers to high dose gamma-ray irradiation[J].Appl Phys Lett,2004,84(3):371-373.
3 NIGAM S,KIM J H,REN F,et al.High energy proton irradiation effects on SiC Schottky rectifiers[J].Appl Phys Lett,2002,81(13):2385-2387.
4 张林,张义门,张玉明,韩超,马永吉.Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应[J] .物理学报,2009,58(4):2737-2741. 被引量：7
5 张林,张义门,张玉明,韩超,马永吉.High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature[J] .Chinese Physics B,2009,18(5):1931-1934. 被引量：1
6 张林,张义门,张玉明,韩超,马永吉.High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact[J] .Chinese Physics B,2009,18(8):3490-3494. 被引量：2
7 张林,肖剑,邱彦章,程鸿亮.Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究[J] .物理学报,2011,60(5):545-549. 被引量：11
8 尚也淳,张义门,张玉明.SiC抗辐照特性的分析[J] .西安电子科技大学学报,1999,26(6):807-810. 被引量：17
9 张林,肖剑,邱彦章,程鸿亮.Ni/4H-SiC SBD电离辐照探测器的实验研究[J] .电子科技大学学报,2012,41(3):467-470. 被引量：3
10 孙毅,唐民,于庆奎.典型卫星轨道的位移损伤剂量计算与分析[J] .航天器环境工程,2013,30(5):487-492. 被引量：7
引证文献4
1 邱彦章,张林.Ti／4H-SiCSBD中子辐照效应的研究[J] .微电子学,2013,43(5):723-726. 被引量：1
2 董升旭,白云,杨成樾,汤益丹,陈宏,田晓丽,刘新宇.不同退火温度下Mo/4H-SiC肖特基接触界面特性分析[J] .半导体技术,2018,43(7):523-528.
3 刘翠翠,郭刚,李治明,殷倩,张艳文,刘建成,韩金华,张峥,张付强,陈启明.碳化硅结势垒肖特基二极管的质子辐射效应[J] .同位素,2022,35(6):449-459. 被引量：1
4 刘翠翠,李治明,韩金华,郭刚,殷倩,张艳文,刘建成.碳化硅结势垒肖特基二极管质子辐照损伤研究[J] .核技术,2023,46(2):42-50. 被引量：3
二级引证文献5
1 李志峰,罗幸祺.中子辐照条件下表层污垢碳化硅包壳的初级离位原子能量分布研究[J] .核科学与工程,2023,43(1):12-18.
2 黄鹤,王鹏,严超,于小河,曹长青,林俊,朱智勇.外胶凝法制备Th_(x)Zr_(1-x)O_(2)惰性基质燃料胶凝行为及微结构研究[J] .核技术,2023,46(10):93-100.
3 徐姜炜,张超,毛飞,张丰收.电子能损效应对材料辐照缺陷影响的理论模拟研究进展[J] .核技术,2023,46(12):99-112. 被引量：3
4 谭志新,敬罕涛,樊瑞睿,黄良生,蒋伟,李强,何泳成,王林,于永积,宁常军,黄蔚玲,邱瑞阳,曾磊,孙晓阳,曹秀霞,马娜,李论.中国散裂中子源伴生质子辐照实验平台及其技术参数的确定[J] .现代应用物理,2024,15(2):94-102. 被引量：4
5 刘建成,郭刚,韩金华,刘翠翠.碳化硅功率二极管辐射效应测试系统的开发[J] .科技资讯,2024,22(14):28-33.
1 刘红侠,吴笑峰,胡仕刚,石立春.Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures[J] .Chinese Physics B,2010,19(5):530-535.
2 M. A. Yeganeh,Sh. Rahmatallahpur,A. Nozad,R. K. Mamedov.Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes[J] .Chinese Physics B,2010,19(10):477-484. 被引量：2
3 M.A.Yeganeh,S.H.Rahmatollahpur.Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes[J] .Journal of Semiconductors,2010,31(7):16-21.
4 陈丰平,张玉明,张义门,汤晓燕,王悦湖,陈文豪.Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes[J] .Chinese Physics B,2012,21(3):400-404. 被引量：3
5 程晓曼,胡子阳,吴仁磊,王忠强,印寿根.Fabrication and Characterization of C60-Based Organic Schottky Diodes[J] .Chinese Physics Letters,2010,27(1):224-226.
6 吕元杰,冯志红,顾国栋,敦少博,尹甲运,韩婷婷,盛百城,蔡树军,刘波,林兆军.Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode[J] .Chinese Physics B,2013,22(7):426-429.
7 Kamal Zeghdar,Lakhdar Dehimi,Achour Saadoune,Nouredine Sengouga.Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode[J] .Journal of Semiconductors,2015,36(12):81-86.
8 王昊,陈星,许光辉,黄卡玛.A novel physical parameter extraction approach for Schottky diodes[J] .Chinese Physics B,2015,24(7):453-458. 被引量：1
9 Ali Ahaitouf,Abdelaziz Ahaitouf,Jean Paul Salvestrini,Hussein Srour.Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements.Application to n-InP[J] .Journal of Semiconductors,2011,32(10):39-43.
10 M.A.Yeganeh,R.K.Mamedov,A.J.Novinrooz.Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature[J] .Journal of Semiconductors,2013,34(8):8-14.
