摘要
研究了用MOCVD方法生长InGaAlN四元合金材料的生长规律,发现生长温度在800～880℃,其In组分随生长温度升高而降低。用变温光致发光谱和时间分辨谱研究了InGaAlN的光学性质。光致发光谱表明InGaAlN的发光强度随温度衰减规律与InGaN类似,但比GaN慢,室温下比GaN的发光强度大1个数量级以上。时间分辨光谱表明,在InGaAlN中存在低维结构的铟聚集区———在没有高温GaN中间层的InGaAlN材料中存在类似量子盘的二维铟聚集区;而在有高温GaN中间层的InGaAlN材料中存在类似量子点的零维铟聚集区。
InGaAlN epilayers were grown by metalorganic chemical vapor deposition (MOCVD) at the temperature from 800 ℃ to 880 ℃ with or without an intermediate high-temperature GaN (HT-GaN) layer. The incorporation of indium was found to increase with decreasing growth temperature. The optical pro-perties of InGaAlN were investigated by temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL). The PL-intensity decay with temperature of InGaAlN is similar with that of InGaN, but is less than that of GaN. At room temperature, the PL intensity of InGaAlN is over one order higher than that of GaN. TRPL signals show that there are different dimensions of indium clusters in the InGaAlN epilayers with or without the HT-GaN layer. In the InGaAlN epilayers without HT-GaN layer, there are quantum-disk-like two-dimensional indium clusters; on the other hand, the InGaAlN with HT-GaN layer, there are quantum-dot-like zero-dimensional indium clusters.
出处
《液晶与显示》
CAS
CSCD
2004年第1期5-9,共5页
Chinese Journal of Liquid Crystals and Displays
基金
国家自然科学基金资助项目(No.60136020)
