摘要
研究了高压Ar气氛中750℃低温下Tl2O分压对Tl2Ba2CaCu2O8超导薄膜相组成及其性能的影响。结果表明采用名义比为Tl1.9Ba2Ca2Cu3Oy的混合物作铊源时,生成的Tl2O分压达到最佳值。在该Tl2O分压下,获得了单相c取向的Tl2Ba2CaCu2O8超导薄膜,其Tc值达到108K;高于该分压时,薄膜中出现Tl2Ca3O6、Tl2O3等杂相,导致膜面粗糙度增大和Tc值下降;低于最佳Tl2O分压,薄膜中生成了Tl2Ba2CaCu2O8和Tl2Ba2Ca2Cu3O10的共生相,导致Tc值下降;而Tl2O分压的进一步降低,则薄膜在铊化中不形成超导相。
The effect of Tl_2O partial pressure on the component phases and properties of Tl_2Ba_2CaCu_2O_8 thin films were studied under high pressure argon atmosphere at the lower temperature of 750℃. The results indicate that the optimal Tl_2O partial pressure was obtained when the stoichiometric Tl_(1.9)Ba_2Ca_2Cu_3O_ywas used as thallium source. Under this Tl_2O partial pressure, single-phase c-oriented Tl_2Ba_2CaCu_2O_8 superconducting thin film with T_c of 108K was obtained. When a higher Tl_2O partial pressure was used, Tl_2Ca_3O_6, Tl_2O_3 and other impurity phases occur, resulting in higher surface roughness and lower T_c. When the Tl_2O partial pressure was lower, the intergrowths of Tl_2Ba_2CaCu_2O_8 and Tl_2Ba_2Ca_2Cu_3O_(10) were found, and T_c value of films decreases. If the Tl_2O partial pressure was even lower, no superconducting phase was obtained during the thalliation process.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第1期66-68,共3页
Journal of Functional Materials
基金
国家重点基础研究发展计划(973计划)资助项目(G1999064604)
关键词
超导薄膜
铊系
氩气
氧化铊
相组成
性能
superconducting thin film
Tl-based
argon atmosphere
thallous oxide
