摘要
本文阐述了提高PtSi肖特基势垒红外CCD(PtSi-SBIRCCD)的量子效率和转移效率的方法。探测器采用具有抗反射层的优化薄PtSi光腔结构,提高了量子效率。为了提高转移效率,CCD移位寄存器采用埋沟CCD,并且发现,降低埋沟中的杂质浓度是提高器件在77K液氮工作温度下的转移效率的一种有效方法。
In this paper, the methods of improving the quantum efficiency and the transfer efficiency of PtSi Schottky barrier infrared CCD (PtSi-SBIRCCD) are expounded. The detector is designed with optimum thin film PtSi optical cavity with antireflective coat, so the quantum efficiency is improved. In order to improve the transfer efficiency, CCD shift register is designed with buried channel CCD. Reducing the impurity concentration in the buried channel is found to be an effective method of improving the transfer efficiency at the liquid nitrogen operating temperature (77K).
出处
《系统工程与电子技术》
EI
CSCD
1992年第10期13-19,共7页
Systems Engineering and Electronics
关键词
探测器
电荷耦合器件
量子效率
Schottky barrier detector, Infrared CCD, Quantum efficiency, Transfer efficiency.
