摘要
采用边界元法分析了不同尺寸的良导体受试设备 (EquipmentUnderTest ,EUT)对TEM传输室特性阻抗和场分布的影响 ,并估算了敏感度测试中EUT所承受暴露场强的大小。计算结果表明 :与空载时相比当EUT满足“1/ 3准则”时 ,TEM传输室的特性阻抗下降值小于 2Ω ,EUT上、下方场强增加 3～ 4dB ,EUT上部所承受暴露场强比通常的估算方法高约 4～ 6dB。
The effects on the characteristic impedance and field distribution of TEM cell c aused by perfectly conducting EUT (Equipment Under Test) were analyzed, and the field strength the EUT exposed to during the sensitivity test was evaluated. The results show that when EUT is consistent with the ”one third area” rule of th umb, the characteristic impedance of TEM cell decreases less than 2Ω comparing with that of empty TEM cell, the field strength above and bellow the EUT increas es about 3～4dB, and the field strength the top of EUT exposed to is about 4～6d B more than that calculated by general method. The measured results agree very w ell with the calculated ones.
出处
《微波学报》
CSCD
北大核心
2003年第4期79-82,共4页
Journal of Microwaves
