摘要
发现光诱导下钴离子可以注入钛阳极氧化膜,利用光电流谱技术和X-射线光电子能谱技术研究这一过程。结果表明:在浓度≥0.10mol.cm^(-3)的Co·(NO_3)_2溶液中,光照使界面上的钴离子部份受激而具有较高的能量,这些钴离子能够克服膜/溶液界面势垒和TiO_2晶格激活能进入氧化膜的四面体或八面体空位,并可能与氧配位形成呈蓝色的钴四配位化合物或粉红色的钴六配位化合物。
Implantation of light-induced Co ions from Co(NO_3)_2 solution (≥0. 10mol·cm^(-3)) into Ti anodic oxide film was observed and studied by photocurrent spectroscopy and XPS technique. The results show that implantation could not take place at film/solution interface without illumination. But the Co ions at film/solution interfaceexcited by illuminating can overcome the interface barrier and the TiO_2 lattice energyand go into the tetrahedral interstitial sites and/or octahedral interstitial sites in TiO_2lattice. The implanted Co ions can interact with the O^(2-) ions in the lattice and pro-bably form tetracoordinated compound of Co with typical blue color and hex-acoordinated compound of Co with typical pink color. The quantum efficiency forphotoelectric conversion of Ti anodic film decreases with very high doping concen-tration of Co ions.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1992年第3期326-331,共6页
Acta Physico-Chimica Sinica
基金
国家自然科学基金
关键词
钴
离子注入
光诱导
钛阳极
氧化膜
Implantation of Co ions
Light-induced
Ti anodic oxide film
