摘要
采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了La掺杂的PbTiO3铁电薄膜(PLT),X-射线衍射测量表明PLT薄膜呈高度(100)择优取向,原子力显微镜和扫描电子显微镜测量表明制备的PLT薄膜的表面平整、结构致密。RT66A测量表明PLT薄膜有优良的铁电特性,500kV/cm的外加电场下,剩余极化为10.6μC/cm2,矫顽电场为55kV/cm。用HP4194A分析了薄膜的介电特性。100kHz时的介电常数为652。
La modified PbTiO_3 (PLT) ferroelectric thin films have been grown on Pt/Ti/SiO_2/Si substrates by a Sol-Gel process.The microstructure and morphology of the prepared PLT thin films were investigated via X-ray diffractometry and atomic force microscopy techniques. The cross-sectional morphology of PLT thin films was measured by a field emission scanning electron microscopy.PLT thin films show smooth surface morphology, denser structure.At an applied electric field of 500 kV/cm, The remnant polarization (P_r) and coercive field (E_c) of the PLT thin films were obtained from the P-V loop measurements about 10.6 μC/cm_2 and 55 kV/cm, respectively.At a frequency of 100 kHz, the dielectric constant of PLT thin films was obtained by HP4194A measurement about 652.
出处
《压电与声光》
CSCD
北大核心
2003年第6期483-485,493,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(60076029)
关键词
溶胶-凝胶法
PLT薄膜
剩余极化
介电常数
Sol-Gel process
PLT ferroelectric thin films
remnant polarization
dielectric properties
