期刊文献+

锆酸铅薄膜的生长特性与表面化学态 被引量:1

Growth Characterization and Chemical States of Lead Zirconate Thin Films
在线阅读 下载PDF
导出
摘要 以醋酸铅和异丙醇锆为原料,乙二醇甲醚为溶剂。通过溶胶-凝胶法和快速退火工艺在Pt(111)/Ti/SiO2/Si(100)基片成功地制备出不开裂的钙钛矿PbZrO3薄膜。用XRD和原子力显微镜测量了薄膜随退火温度变化的结构和表面形貌特征,用XPS测试了650°C退火PbZrO3薄膜的表面化学态。 PbZrO3 thin films on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a SolGel process and rapid thermal annealing (RTA).Using analytically pure lead acetate hydrate Pb(CH3COO)2·3H2O,and zirconiumnproponed Zr(O(CH2)2CH3)4 as starting materials;2methoxyethanol C3H8O2 as a solvent.PbZrO3 films grown on Pt/Ti/SiO2/Si substrates annealed at various temperatures from 450 °C to 650 °C for 10 min,the structure,surface morphology and chemical states have been measured by XRD,AFM and XPS.
出处 《压电与声光》 CAS CSCD 北大核心 2003年第2期142-145,169,共5页 Piezoelectrics & Acoustooptics
基金 暨南大学青年基金资助项目(640061)
关键词 PbZrO3 薄膜 溶胶-凝胶 表面形貌 化学态 PbZrO_3 thin films Sol-Gel surface morphology chemical states
  • 相关文献

参考文献16

  • 1[1]BROOKS K G,CHEN J,UDAYAKUMA R K R,et al.Electric field force phase switching in La-modified lead zirconate titanates tannate thin films[J].J Appl Phys,1994,7 5(3):1 699-1 704.
  • 2[2]VCHINO K.Shape memory effec t associated with the forced phase trans it ion in antiferroelectrics[J].Proc of the Materials Research society in Ternation al Matting on Advanced Materials,1989,9: 489-503.
  • 3[3]LI K K,WANG F,HAERTLING G H .Antiferr oelectric lead zirconate thin films derived from acetate precursors[J].J Mater Sci,1995,30(5):1 386-1 390.
  • 4[4]BAI G R,CHANG H L M,LAM D J ,et al.Pr eparation and structure of PbZrO3 epita xial films by metalorganic chemical vapor deposition [J].Appl Phys Lett,1993,62( 15):1 754-1 756.
  • 5[5]CHATTOPADHYAY S,AYYUB P,PAK AR V R,et al.Dielectric properties of oriented thin films of PbZrO3 on Si produced by pulsed laser ablation [J].J Appl Phys,1998, 83(12):7 808-7 812.
  • 6[6]TANI T,LI J F,VIEHLAND D,et al.Antif erroelectric-ferroelectric switching and induced strains for Sol-Gel derived lead zirconate thin layers [J].J Appl Phys, 1994,75(6):3 017-3 023.
  • 7[7]JANG J H,YOON K H,OH K Y.El ectrical fatigue of ferroelectric PbZr 0.5Ti0.5O3 and antiferroelectric PbZrO3 thin films [J].Mater Res Bull,20 00,35(3):393-402.
  • 8[8]YAMAKAWA K,TROLIER-M CKINSTRY S,DOUGHERTY J P,et al.Reactive magnetron co-sputtered antiferroele ctric lead zirconate thin films [J].Appl Phys Lett,1995,67(14):2 014-2 016.
  • 9[9]TANG X G,ZENG H R,DING A L, et al.Microstructure and optical propert ies of amorphous and crystalline PbZrO3 thin films grown on Si(100) substrates by a Sol-Gel process [J].Solid State Com munications,2000,116(9):507-511.
  • 10[10]JONA F,SHIRANE G,MZAAI F, et al.X-ray and neutron diffraction stud y of anitiferroelectric lead zirconate,P bZrO3 [J].Phys Rev,1957,105:849-856.

同被引文献9

  • 1Li K K, Wang F, Haertling G H. Antiferroelectric lead zirconate thin films derived from acetate precursors [J]. J. Mater. Sci., 1995, 30 (5):1386.
  • 2Bai G R, Chang H L M, Lam D J, et al. Preparation and structure of PbZrO3epitaxial films by metalorganic chemical vapor deposition [J]. Appl.Phys. Lett.,1993, 62(15):1754.
  • 3Chattopadhyay S, Ayyub P, Pakar V R,et al. Dielectric properties of oriented thin films of PbZrO3on Si produced by pulsed laser ablation [J]. J. Appl. Phys.1998, 83(12): 7808.
  • 4Tani T, Li J F, Viehland D, et al. Antiferroelectric-ferroelectric switching and induced strains for sol-gel derived lead zirconate thin layers [J]. J. Appl. Phys.,1994, 75(6):3017.
  • 5Jang J H, Yoon K H, Oh K Y. Electrical fatigue of ferroelectric PbZr0.5Ti0.5O3and antiferroelectric PbZrO3thin films [J]. Mater. Res. Bull., 2000, 35 (3):393.
  • 6Yamakawa K, Trolier-McKinstry S, Dougherty J P, et al.Reactive magnetron co-sputtered antiferroelectric lead zirconate thin films [J]. Appl. Phys. Lett.,1995, 67(14): 2014.
  • 7Tang X G, Zhou Q F, Zhang J X. Growth and characterization of oriented Pb1-xCaxTiO3thin films[J]. Thin Solid Films , 2000, 375 (1-2): 159.
  • 8Taue T C, Optical properties of solids [M]. North-Holland: Amsterdam, 1972, 372.
  • 9Zametin V I. Absorption edge anomalies in polar semiconductors and dielectrics at phase transitions [J]. Phys. Stat. Sol. (b),1984, 124 (2): 625.

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部