摘要
不同注量200keVXe+注入YSZ单晶样品的电子显微分析结果表明,随着辐照注量的增加,缺陷簇的密度增大,在1×1015～1×1016cm-2Xe+注量,缺陷簇密度迅速增大,形成间隙型位错环;当Xe+注量增大到1×1017cm-2,缺陷簇密度的增加变得缓慢,并且有直径为2～4nm的Xe气泡析出。选区电子衍射花样表明YSZ样品没有产生非晶化转变。在Xe+辐照的离位率高达约350dpa的情况下,YSZ晶体没有非晶化,其原因主要是由于注入的Xe+以气泡形式析出。
Transmission electron microscopy (TEM) was utilized to characterize the damage structure and the formation of Xe bubbles in 200 keV Xe^+ -implanted yttria-stabilized zirconia (YSZ) single crystals with different fluences. TEM analysis results showed that the density of defect clusters increased with increasing ion fluence. The density of defect clusters increased rapidly and formed clear interstitial type dislocation loops within dose range from 1×10^(15) Xe^+cm^(-2) to 1×10^(16) Xe^+ cm^(-2), and then the density of defect clusters increased slowly up to a dose of 1×10^(17) Xe^+ cm^(-2). Small bubbles (2～4 nm in diameter) precipitate in the sample at a dose of 1×10^(17) Xe^+ cm^(-2). No amorphization was observed in the selected area diffraction (SAD) pattern. These results also made it clear that no amorphization at about 350 dpa in the Xe^+-implanted sample was mainly caused by the precipitation of Xe bubbles.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2004年第1期95-97,共3页
High Power Laser and Particle Beams
基金
国家自然科学基金
中国工程物理研究院联合基金资助项目(10376006)
