摘要
本文研究由氮(N)、硼(B)以及卤素(X)元素掺杂的 a-Si∶H 膜在静电场下的光电特性.实验结果表明,(B+N)、(B+X)双元素掺杂比单元素更明显地提高 a-Si∶H 膜的表面电位 V_(?),降低残余电位V_R,并在 X/Si=10^(-2),B_2H_6/SiH_4=0.3×10^(-4)时,得到了 V_(?)=60V/μm,σ_D=10^(-4)((?)cm)^(-1)的静电复印用a-Si∶H 材料.
The optoelectrical properties of a-Si:H doped with nitrogen(N),boron(B)and halogen(X)elements were investigated.The experimental results show that the double doping such as(B+N)and(B+X)can improve the xerographic properties of a-Si:H more effectively thansingle doping.High surface potential (V_(?)) and low residual voltage(V_R) are achieved by theproper control of dopant amount,that is,when the ratio of X/Si is controlled at 10^(-2) and thatof B/Si at 0.3×10^(-4),V_(?),and σD can approach 60V/μm and 10^(-14)(Ω cm)^(-1) respectively.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第4期460-465,共6页
Journal of Inorganic Materials
