摘要
以交流阻抗谱技术对四方 ZrO_2多晶陶瓷的电学性能进行了研究,结果表明,以 CeO_2+Gd_2O_3稳定的四方 ZrO_2比单纯用 CeO_2稳定的电导率要高一个多数量级,而活化能低约10%;与9mol%Y_2O_3稳定的立方ZrO_2比较,在900℃时电导率约为后者的一半,活化能则高约10%。研究结果还指出,杂质 SiO_2聚集在晶粒间界上,对材料的电导率和活化能都有很大影响。
This paper reports the study on the electrical properties of tetragonal ZrO_2 po-lycrystalline ceramics by using AC impedance spectroscopy technique.The resultsshow that the conductivity of tetragonal ZrO_2 stabilized with CeO_2+Gd_2O_3 is oneorder of magnitude higher than that of stabilized with CeO_2 only and the conduc-tion activation energy is decreased by about 10%.Compared with cubic ZrO_2 stabi-lized With Y_2O_3,its conductivity value at 900℃ is about one half of the later andthe activation energy is increased by 10% or so.This research work also indicatesthat the addition of SiO_2 impurity has much influence on its conductivity and ac-tivation energy.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第1期57-63,共7页
Journal of Inorganic Materials
关键词
陶瓷
氧化锆
交流阻抗谱
电导率
Tetragonal ZrO_2
AC impedance spectroscopy technique
Electrical conductivity