摘要
通过大量的工艺和辐照实验,研究了通HCI对所生长的SiO_2薄膜辐照性能的影响,得到了固定HCl流量为15ml/min时,通HCl的最佳时间为40～150s。并讨论了HCl对SiO_2生长速率的影响及其机理。
It has been found that radiation characteristics of SiO_2 grown in 1000℃ with dry O_2+HCl of depend strongly on the amount of HCl introduced, when the rate of HCl is controlled at 15ml/min, the optimum time during which the HCl is admitted into the oxidation furnace. is from 40 to 150 seconds. The growth rate and its mechanism on HCl oxidation have been discussed.
出处
《微电子学与计算机》
CSCD
北大核心
1992年第5期40-43,共4页
Microelectronics & Computer
