摘要
本文以功率MOS器件(IRF440)为例。给出了安全工作区在实际工作条件下的修正步骤及SOA曲线的修正结果。
In this paper, the modification method of power MOSFET's soa curve is given according to its real-world working conditions, and then a modified example is shown.
出处
《微电子学与计算机》
CSCD
北大核心
1992年第4期7-8,共2页
Microelectronics & Computer
