摘要
本文详细地分析了薄膜SOI器件一系列有益的特性,如:较大的亚阈值陡度,扭曲(kink)效应的消除以及短沟道效应的削弱等。最后指出,薄膜SOI器件技术是今后设计制造新型亚微米器件及电路的一种有效的方法。
A number of useful properties of thin-film SOI devices, such as Sharp subthreshold slopes, absence of kink effect and reduction of the short-channel effect etc. are analyzed in detail in this paper. It is concluded that thin-film SOI technology is an effective way to design and fabricate novel submicron devices and circuits in the future.
出处
《微电子学》
CAS
CSCD
1992年第3期39-43,67,共6页
Microelectronics
