摘要
利用１．０５３μｍ钕玻璃激光辐照Ａｕ、Ｔｉ、Ａｇ及Ｃ＿８Ｈ＿８等材料平面靶，在不同功率密度Ｉ＿Ｌ下测量了等离子体中由于反常吸收而产生的逃逸高能电子能谱。测量是由一台可变磁场９０°焦β谱仪完成的。测量结果表明：在谱仪测量的能量范围内，热电子分布中的高能尾部在高能电子能谱中所占的比重是完全可以忽略的。我们所测的电子能谱大多数可以用麦克斯韦分布来描述，高能电子温度Ｔ＿ｈ一般为３０～７０ｋｅＶ。实验得到Ａｕ、Ｔｉ、Ｃ＿８Ｈ＿８平面靶Ｔ＿ｈ与Ｉ＿Ｌ之间的关系式。
This paper describes the experiments that 1.053μm Nd:glass laser irradiates planar targets Au,Ag, Ti and C_8H-8. At different laser intensity we have meas-ured escaping high-energy electron spoctra that generated by abnormal abeorption in plasma. The results show that high-energy tail of hot electron distribution is negligible. The electron energy spoctra can be described by Maxwell distribution. High-energy elec-tron temperature T_h is approximately 30～70keV. The scale between the temperature T_h for planar targets Au,Ti and C_8H_8 and the irradiation intensity I_L is given.
出处
《强激光与粒子束》
EI
CAS
CSCD
1995年第4期608-612,共5页
High Power Laser and Particle Beams
