摘要
硒代胱氨酸在硒 金(Se Au)膜修饰玻碳电极上产生两个灵敏的氧化还原峰:峰II(-500mV左右)和峰III(-327mV左右),以峰II的峰电流作为评价指标,采用正交设计与均匀设计相结合的方法对Se Au膜修饰电极的制备条件进行优化得到最佳优化条件:底液0.1mol LKCl;沉积电位为-850mV;沉积时间为60s;SeO2浓度为8.3×10-3mol L;AuCl3浓度为8.9×10-4mol L。均匀设计的数据应用Matlab计算机软件处理。依此制备的Se Au膜修饰电极性能稳定,用于硒代胱氨酸伏安特性研究有良好的重现性。
Selenocystine had two sensitive cathodic peaks at about -500 mV (Ⅱ) and anodic peak at about -327 mV (Ⅲ) at SeAu film modified glassy carbon electrode, respectively. The conditions for preparing the SeAu film modified electrodes were optimized by orthogonal design and uniform design. The optimum conditions were: supporting electrolyte 0.1 mol/L KCl, deposition potential -850 mV, deposition time 60 s, concentration of SeO2 8.3×10-3 mol/L, concentration of AuCl3 8.9×10-4 mol/L. The data was processed with matalab software. The voltammetric response of selenocystine showed good repeatability at SeAu film modified glassy carbon electrode.
出处
《分析试验室》
CAS
CSCD
北大核心
2003年第6期9-12,共4页
Chinese Journal of Analysis Laboratory
基金
广东省自然科学基金资助项目(970630)
国家基金 硒杂环化合物及其自组装膜的研究(20271022)
