摘要
介绍了铌电容器发展的起因、背景、历程及现状。确定了铌电容器电介质氧化膜的稳定性是影响其性能的首要因素 ,并对产生电介质氧化膜的电化学反应进行了对比研究。结果表明 :选择合适的形成液类型及形成时间等条件 ,可以明显改善五氧化二铌电介质膜的稳定性 ,从而使铌电容器的性能得到有效改善和控制 ,并进一步接近钽电容器性能 ,具有工业化应用潜力。
The application of metal niobium for making niobium capacitor in electronic industry was introduced, and the original, background, history and current state for development of niobium capacitor were described. The stability of dielectric film has influence on performance of niobium capacitor. A better result was finally obtained through comparative experiments on the dielectric film formed electrochemically. The result shows that the stability of niobium pentoxide dielectric film is greatly improved by optimizing process conditions such as type of formation solution and formation time. As a result, the performance of niobium capacitor is effectively controlled and improved, thereby solid niobium capacitor equivalent to tantalum capacitor at performance can be manufactured, and has potential for industrialization application.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2003年第6期1401-1406,共6页
The Chinese Journal of Nonferrous Metals
基金
国家高技术研究发展计划资助项目 (2 0 0 2AA3 2 5 12 0 )
关键词
铌电容器
电介质
稳定性
容量
漏电流
niobium capacitor
dielectric film
capacitance
leakage current
