摘要
首次发现硅锗合金氧化纳米结构中的锗纳米层的PL谱(5410 波长处的谱峰),采用量子受限模型分析PL谱结构得到的计算方法和结果与实验拟合较好。
We investigate the oxidation behaviour of Si_(1-x)Ge_x alloys (x=0.05, 0.15, and 0.25). The thickness of nanolayers and property of nanoparticles in oxide films after oxidation in O_2 (dry) atmosphere in different temperaturs and for various lengths of time are measured with the high precision ellipsometer, the Rutherford backscattering spectrometry and high-resolution scanning transmission electron microscopy. It was found that rejection of Ge from oxide layer results in piling up Ge at the interface between the growing SiO_2 and the remaining SiGe, which forms a nanometer Ge-rich layer. We find a nanometer cap layer over the oxide film after fast oxidation, in which there are many Ge nanoparticles. Some new peak in PL spectra relating to nanostructure is discovered for the first time. We provide a quantum confinement model to analyse the PL spectra and the mechanism of nanostructure of the oxide and Ge segregation.
出处
《贵州科学》
2003年第4期1-4,共4页
Guizhou Science
基金
贵州省自然科学基金项目
