摘要
本文介绍了当前金刚石薄膜形核的现状及用热丝化学气相沉积法在不同的衬底上沉积金刚石膜 ,对Si、Ni、Cu三种衬底生长的金刚石膜进行研究如何增大形核密度、提高形核质量。得到了制备高密度和高质量的金刚石膜的方法。
In this paper,the situation of the diamond film nucle at ion was introuced,the nucleation on different substrates in HFCVD(Hot Filament Chemical Vapor Deposition) system were deposited. The improvement of the diamond nucleation on Si, Ni,Cu was investigated, get the method of high density and h igh quality depositing diamond film.
出处
《长春理工大学学报（自然科学版）》
2003年第4期78-80,共3页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
协作国家自然科学基金项目(50 0 72 0 4 5)
