摘要
以注入氧隔离(SIMOX)技术制备的SOI(silicon on insulator)为衬底,利用气相外延生长技术获得了质量良好的厚膜SOI材料,进而通过反应离子刻蚀方法在厚膜SOI材料上成功研制了SIMOX大截面单模脊型光波导。对于波长为1.55μm的光,其传输损耗小于0.6dB/cm。
High quality silicon-on-insulator (SOI) wafers with a thicker top silicon layer were prepared by chemical vapor deposition epitaxial technology on thin SOI substrates manufactured by separation by implanted oxygen (SIMOX) process. SIMOX single-mode rib waveguides with large cross-section have been fabricated by reactive ion etching technology in these SOI structures. And the SIMOX rib waveguides propagation losses are below 0.6 dB/cm by measurements at the wavelength of 1.55 μm.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2004年第1期25-28,共4页
Journal of Optoelectronics·Laser
基金
国家863计划资助项目(2001AA312070)
关键词
注入氧隔离
SIMOX
化学气相沉积
脊型光波导
集成光学
厚膜SOI材料
Chemical vapor deposition
Integrated optics
Reactive ion etching
Silicon on insulator technology
Substrates
Vapor phase epitaxy
