期刊文献+

红外热释电探测器的微图形化研究 被引量:4

Study on the micropattering of pyroelectric IR sensor
在线阅读 下载PDF
导出
摘要 红外热释电探测器的关键是敏感元的研制,而敏感元主要是由具有一定图形的铁电薄膜和上下电极构成。采用半导体光刻工艺,利用化学腐蚀法成功地对PZT铁电薄膜进行了刻蚀,同时采用剥离技术对相应的电极实现了图形化。 A critical component in the pyroelectric IR sensor is the sensing organ, which consists of the ferroelectric thin film in certain shape and its upper and bottem electrodes. In the paper, the ferro -electric thin films are micropatterned successfully by optical lithography and chemical etching. The electrodes are finally formed by lift - off techniques.
出处 《功能材料与器件学报》 CAS CSCD 2003年第4期448-452,共5页 Journal of Functional Materials and Devices
基金 国家重点基础研究发展计划资助(No.2002CB613304) 上海市重点学科建设项目资助
关键词 红外热释电探测器 敏感元 微图形化 光刻 剥离 铁电薄膜 pyroelectric IR sensor lithography lift - off
  • 相关文献

参考文献10

  • 1[1]Dey S K, Zuleeg R. Processing and parameters of Sol- Gel PZT thin films for GaAs memory applications [J]. Ferroelectrics,1990,112:309~ 317.
  • 2[2]Seth V K, Schulze W A. Fabrication and characterization of ferroelectric PLZT 7/(65/35) ceramic thin films and fibers[J]. Ferroelectrics, 1990,112:283~ 307.
  • 3[3]Wenger A B, Brueck S R J, Wu A Y. Integrated PLZT thin film modulators[J]. Ferroelectrics,1991,116:195~ 204.
  • 4[4]Scott J F, Paz De Araujo C A. Ferroelectrics Memories[J]. Science, 1989,246:1400~ 1405.
  • 5[5]Bondurant D, Gnadinger F. Ferroelectrics for nonvolatile RAMS[J]. IEEE Spectrum, 1989:30~ 33.
  • 6[7]Paul W Kruse, David D Skatrud. Uncooled infrared imaging arrays and systems[J]. Academic Press, 1997:165~ 167.
  • 7[8]Walter lang, Karl Kuhl, Hermann Sandmaier. Absorbing layers for thermal infrared detectors[J]. Sensors and Actuator, 1992, A34:243~ 248.
  • 8[10]Roy R A, Etzold K F, Cuommo J J. Lead Zirconate- Titanate films produced by facing target rf- sputtering. In: Mayer E R, Kingon A I eds. Ferroelectric thin films[M]. San Francisco, Pittsburgh: Mat Res Soc, 1990,77~ 82.
  • 9[11]Kodoh H, Ogawa T, Morimoto A, et al. Ferroelectric properties of Lead Zirconate- Titanate films prepared by laser ablation[J]. Appl Phys Lett,1991,58(25):2910~ 2912.
  • 10[12]Ian M R, David V T, Keith G B. Ferroelectric PZT thin films by Sol- Gel deposition[J]. Sol- Gel Science and Technology, 1998,13:813~ 820.

同被引文献23

  • 1张勤勇,蒋书文,李言荣,张万里.热处理对STO铁电薄膜微结构的影响[J].功能材料,2005,36(2):203-205. 被引量:6
  • 2Owen R,Belcher J,Bertan H,et al..Producibility adVances in hybrid uncoolcd infrared devices-Ⅱ[C]//SPIE,1996,2746:101.
  • 3M.A.Todd,R.Watton.Laser assisted etching of ferroelectric ceramics for the reticulation of IR detector arrays[J].Infrared technology and applications,1990,1320:95-106.
  • 4DEAraujo C A, Cuchiare J D, McMillan L D. [J]. Nature, 1995,374 : 627-629.
  • 5Guo X L, Liu Z G, Chen X Y. [J]. J Phys D, 1996,29:1632-1635.
  • 6Liu Z G, Chen X Y, Liu J M. [J]. Solid State Communi,1994,91:671-673.
  • 7Spinellaa C, Lombardo S. [J]. J Appl Phys, 1998, 84(10) :5383-5414.
  • 8DEAraujo C A,Cuchiare J D,McMillan L D. [J]. Nature,1995,374:627-629.
  • 9Guo X L, Liu Z G, Chen X Y. [J]. J Phys D, 1996,29:1632-1635.
  • 10Liu Z G, Chen X Y,Liu J M. [J]. Solid State Communi,1994,91:671-673.

引证文献4

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部