摘要
提出了在SiGe/Si异质结开关功率二极管的本征i区中采用掺杂浓度三层渐变式结构。由Medici模拟所得的特性曲线表明,该结构在正向I-V特性基本不发生改变的前提下,与i区固定掺杂结构相比具有更好的反向恢复电流与反向恢复电压特性,尤其软恢复特性更加明显,反向恢复过程加快。还对渐变掺杂所得到的优越性能进行了分析,从理论上给出了较好的解释。
A novel p+ (Si1 -xGex) - n- - n+ hetero -junction power diode with gradual changing doped n- -region is proposed. The device characteristics are simulated by Medici. Results show that the fast - switching and the soft recovery characteristics ot the device are much improved than the constant structure. The ascendant characteristics are also studied theoretically.
出处
《功能材料与器件学报》
CAS
CSCD
2003年第4期437-442,共6页
Journal of Functional Materials and Devices
基金
信息产业部2001年信息产业科研试制项目(01XK610012)
