摘要
介绍了采用氮气离子束溅射 ,高纯石墨为靶材 ,沉积掺氮碳薄膜的设备及工艺技术。对薄膜的沉积过程作了讨论 ,采用 X射线光电子能谱 (XPS)技术等对薄膜结构成分、氮 -碳、碳 -碳原子之间的键以及结合能作了研究 ,在 (1 1 1 )单晶硅片上沉积掺氮碳薄膜 ,构成 C/Si异质结 ,在 1 0 0 m W/cm2 光照下 ,开路电压达 2 0 0 m V。
In this paper, a kind of depositing porcess, ion beam spu ttering, was introduced, which was used to form a new photovoltaic material: N d oped carbon thin films. Nitrogen was use d as sputtering gas, and a high pure gra phite sheet was served as a sputtering t arget. XPS and AFM techniques were empol yed as test probes for determining their structure and chemical bonding properti es. Si/C hetero junction has been fabric ated successfully. Its open circuit volt age reaches 200 mV, under 100 mW/cm 2 AM 1.5 illumination.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第3期320-322,共3页
Research & Progress of SSE
