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Single-Wall Carbon Nanotube Growth from Graphite Layers-a Tight Binding Molecular Dynamics Simulation

Single-Wall Carbon Nanotube Growth from Graphite Layers-a Tight Binding Molecular Dynamics Simulation
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摘要 The growth of single-wall carbon nanotube from graphite layers is studied by tight binding molecular dynamics simulation. Given temperature of 2500 K or 3500 K and an interval of 0.25 nm for the two layers of graphite, a single-wall carbon nanotube with a zigzag shell will be produced. On the other conditions the carbon nanotube cannot grow or grows with too many defects. All carbon nanotube ends have pentagons which play an important role during the tube ends closing.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2003年第6期637-638,共2页 材料科学技术(英文版)
关键词 Single-wall carbon nanotube GRAPHITE Tight binding molecular simulation Single-wall carbon nanotube, Graphite, Tight binding molecular simulation
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