摘要
Ferroelectricity in Langmuir-Blodgett (LB) films (Z-type and alternated Y-type) of nitrogencrown (NC) and arachidic acid (AA) was investigated by electric polarization measurements and surface pressure-molecular area (p-A) isotherm. For Z-type AA LB multilayer and the AA LB films incorporating barium and manganese ions, as well as for Z-type NC LB multilayer and the Y-type NC/AA alternating LB films, typical hysteresis loops of the samples were observed and confirmed existence of the remnant polarizations in the LB films. Their corresponding remnant polarizations were found to be 15, 180, 650, 450 and 9400 mC·m-2, respectively. Therefore, it was demonstrated that the enhancement of ferroelectricity in the LB films could be created by incorporation of barium and manganese ions into the LB film structures and strong interaction between alternating monolayers of the samples. These novel approaches can be employed to create strong ferroelectric LB films to make ferroelectric thin-film device for practical applications.
Ferroelectricity in Langmuir-Blodgett (LB) films (Z-type and alternated Y-type) of nitrogencrown (NC) and arachidic acid (AA) was investigated by electric polarization measurements and surface pressure-molecular area (p-A) isotherm. For Z-type AA LB multilayer and the AA LB films incorporating barium and manganese ions, as well as for Z-type NC LB multilayer and the Y-type NC/AA alternating LB films, typical hysteresis loops of the samples were observed and confirmed existence of the remnant polarizations in the LB films. Their corresponding remnant polarizations were found to be 15, 180, 650, 450 and 9400 mC·m-2, respectively. Therefore, it was demonstrated that the enhancement of ferroelectricity in the LB films could be created by incorporation of barium and manganese ions into the LB film structures and strong interaction between alternating monolayers of the samples. These novel approaches can be employed to create strong ferroelectric LB films to make ferroelectric thin-film device for practical applications.
基金
supported by the National Natural Science Foundation of China(Grant Nos.10274014 and 19704004)
the Overseas Student Foundation of the Ministry of Education of China
the Education Development Foundation by Shanghai City and the Education Commission of Shanghai City,as well as the opening topic supported by National Laboratory for Infrared Physics of the Chinese Academy of Scieaces.
