摘要
本文推导出外延层穿通击穿情况下均匀掺杂外延层电阻率和厚度的关系式,及使外延层理想比电阻ρW取最小值时电阻率和厚度的精确表达式。从比导通电阻最小的要求考虑,提出了优选外延层参数的方法,计算结果表明,此法优于传统方法和C.Hu方法,可使VDMOSFET的比导通电阻达到最小值。
We develop the formula which relates the resistivity to the thickness of a homogeneous doping cpitaxial layer for punch-through breakdown,at the same time we present exaet expression of the resistivity and the thickness which minimize the speeifie resistanee pw of ideal epitaxial layer. In view of minimizing specific on-resistanee, the method of optimizing cpitaxial layer parameters is presented. The computation results have showns that this method has an advantage over eonventional one and C. Hu's, it can minimize the specific on-resistance of VDMOSFET.
关键词
外延层参数
选择
电阻
VDMOSFET
optimization of epitaxial laycr parameters, punch-through breakdown, speeific on-resistance
